Document Type

Article

Original Publication Date

2005

Journal/Book/Conference Title

Applied Physics Letters

Volume

86

Issue

4

DOI of Original Publication

10.1063/1.1849833

Comments

Originally published at http://dx.doi.org/10.1063/1.1849833

Date of Submission

April 2015

Abstract

We report on the reduction of threading dislocations in GaN overlayers grown by organometallic vapor phase epitaxy on micro-porous TiN networks. These networks were obtained by in situannealing of thin Ti layers deposited in a metalization chamber, on the (0001) face of GaN templates. Observations by transmission electron microscopy indicate dislocation reduction by factors of up to 10 in GaN layers grown on TiN networks compared with the control GaN.X-ray diffraction shows that GaNgrown on the TiN network has a smaller (102) plane peak width (4.6 arcmin) than the control GaN (7.8 arcmin). In low temperature photoluminescence spectra, a narrow excitonic full-width-at-half-maximum of 2.4 meV was obtained, as compared to 3.0 meV for the control GaN, confirming the improved crystalline quality of the overgrown GaN layers.

Rights

Fu, Y., Moon, Y.-T., Yun, F., et al. Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy. Applied Physics Letters, 86, 043108 (2005). Copyright © 2005 AIP Publishing LLC.

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VCU Electrical and Computer Engineering Publications

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