Document Type
Article
Original Publication Date
2004
Journal/Book/Conference Title
Applied Physics Letters
Volume
85
Issue
9
DOI of Original Publication
10.1063/1.1786632
Date of Submission
April 2015
Abstract
6H–SiC was etched with hydrogen at temperatures between 1000 and 1450°C. The etchedSi-terminated face for the 6H‐SiC wafer was investigated by atomic force microscopy and temperature-dependent current–voltage (I–V–T)measurements. Mechanical polishing damage was effectively removed by hydrogen etching at temperatures above 1250°C. Atomic force microscopy images revealed that very good surface morphology, atomic layer flatness, and large and large step width were achieved. Schottky diode characteristics were investigated in detail by current–voltage and temperature-dependent current–voltage measurements, and the results showed a transition from defect assisted tunneling to thermionic emission as the annealingtemperature was increased from 1250 to 1450°C.
Rights
Doğan, S., Johnstone, D., Yun, F., et al. The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy. Applied Physics Letters, 85, 1547 (2004). Copyright © 2004 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1786632