Document Type
Article
Original Publication Date
2007
Journal/Book/Conference Title
Journal of Applied Physics
Volume
102
Issue
3
DOI of Original Publication
10.1063/1.2764236
Date of Submission
November 2015
Abstract
We show that a spin field effect transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because the ferromagnets are half-metallic, so that the Fermi level can be placed above the majority but below the minority spin band. In that case, the majority spins will be propagating, but the minority spins will be evanescent. At low temperatures, the Fano resonances can be exploited to implement a digital binary switch that can be turned on or off with a very small gate voltage swing of few tens of microvolts, leading to extremely small dynamic power dissipation during switching. An array of 500 000×500 000 such transistors can detect ultrasmall changes in a magnetic field with a sensitivity of 1 fT/√Hz, if each transistor is biased near a Fano resonance.
Rights
Wan, J., Cahay, M., & Bandyopadhyay, S. Digital switch and femtotesla magnetic field sensor based on Fano resonance in a spin field effect transistor. Journal of Applied Physics, 102, 034301 (2007). Copyright © 2007 American Institute of Physics.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.2764236