Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)

Authors

L. Tarnawska, IHP GmbH
P. Zaumseil, IHP GmbH
M. A. Schubert, IHP GmbH
S. Okur, Virginia Commonwealth UniversityFollow
U. Ozgur, Virginia Commonwealth UniversityFollow
H. Morkoç, Virginia Commonwealth UniversityFollow
R. Paszkiewicz, Wroclaw University of Technology
P. Storck, Siltronic AG
T. Schroeder, IHP GmbH

Document Type

Article

Original Publication Date

2012

Journal/Book/Conference Title

Journal of Applied Physics

Volume

111

Issue

7

DOI of Original Publication

10.1063/1.3699201

Comments

Originally published at http://dx.doi.org/10.1063/1.3699201

Date of Submission

October 2015

Abstract

Thick (∼900 nm) GaN layers were grown by molecular beam epitaxy on cost-effective Sc₂O₃/Y₂O₃/Si(111) substrates and characterized by x-ray diffraction and photoluminescence. Samples grown in Ga-rich condition show superior structural and optical quality with reduced density of cubic GaN inclusions within the hexagonal matrix and a relatively strong photoluminescence emission at 3.45 eV at 10 K. Cubic inclusions are formed in the initial growth stage and their concentration is reduced with increasing film thickness and after rapid thermal annealing.

Rights

Tarnawska, L., Zaumseil, P., & Schubert, M. A., et al. Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111). Journal of Applied Physics, 111, 073509 (2012). Copyright © 2012 American Institute of Physics.

Is Part Of

VCU Electrical and Computer Engineering Publications