Weak antilocalization and zero-field electron spin splitting in AlxGa1−xN∕AlN∕GaN heterostructures with a polarization-induced two-dimensional electron gas

Authors

Ç Kurdak, University of Michigan - Ann Arbor, Virginia Commonwealth University
N. Biyikli, Virginia Commonwealth University
Ü. Özgür, Virginia Commonwealth UniversityFollow
Hadis Morkoç, Virginia Commonwealth UniversityFollow
V. I. Litvinov, WaveBand/Sierra Nevada Corporation

Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Physical Review B

Volume

74

Issue

11

DOI of Original Publication

10.1103/PhysRevB.74.113308

Comments

Originally published by the American Physical Society at: http://dx.doi.org/10.1103/PhysRevB.74.113308

Date of Submission

May 2015

Abstract

Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlxGa1−xN∕AlN∕GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exhibit a weak antilocalization feature with a spin-orbit field of around 1.8mT. The zero-field electron spin splitting energies extracted from the weak antilocalization measurements are found to scale linearly with the Fermi wave vector (ESS=2αkf) with an effective linear spin-orbit coupling parameter α=5.5×10−13eVm. The spin-orbit times extracted from our measurements varied from 0.74 to 8.24pswithin the carrier density range of this experiment.

Rights

Kurdak, Ç., Biyikli, N., Özgür, Ü., et al. Weak antilocalization and zero-field electron spin splitting in AlxGa1−xN∕AlN∕GaN heterostructures with a polarization-induced two-dimensional electron gas. Physical Review B, 74, 113308 (2006). Copyright © 2006 American Physical Society.

Is Part Of

VCU Electrical and Computer Engineering Publications