Original Publication Date
Physical Review B
DOI of Original Publication
Date of Submission
Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlxGa1−xN∕AlN∕GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exhibit a weak antilocalization feature with a spin-orbit field of around 1.8mT. The zero-field electron spin splitting energies extracted from the weak antilocalization measurements are found to scale linearly with the Fermi wave vector (ESS=2αkf) with an effective linear spin-orbit coupling parameter α=5.5×10−13eVm. The spin-orbit times extracted from our measurements varied from 0.74 to 8.24pswithin the carrier density range of this experiment.
Kurdak, Ç., Biyikli, N., Özgür, Ü., et al. Weak antilocalization and zero-field electron spin splitting in AlxGa1−xN∕AlN∕GaN heterostructures with a polarization-induced two-dimensional electron gas. Physical Review B, 74, 113308 (2006). Copyright © 2006 American Physical Society.
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VCU Electrical and Computer Engineering Publications