Unusual luminescence lines in GaN

Authors

M. A. Reshchikov, Virginia Commonwealth University
D. Huang, Virginia Commonwealth University
F. Yun, Virginia Commonwealth University
P. Visconti, Virginia Commonwealth University
L. He, Virginia Commonwealth University
H. Morkoç, Virginia Commonwealth University
J. Jasinski, Lawrence Berkeley National Laboratory
Z. Liliental-Weber, Lawrence Berkeley National Laboratory
R. J. Molnar, Massachusetts Institute of Technology
S. S. Park, Samsung Advanced Institute of Technology
K. Y. Lee, Samsung Advanced Institute of Technology

Document Type

Article

Original Publication Date

2003

Journal/Book/Conference Title

Journal of Applied Physics

Volume

94

Issue

9

DOI of Original Publication

10.1063/1.1609632

Comments

Originally published at http://dx.doi.org/10.1063/1.1609632

Date of Submission

October 2015

Abstract

A series of sharp intense peaks was observed in the low-temperature photoluminescence spectrum of unintentionally doped GaN in the photon energy range between 3.0 and 3.46 eV. We attributed the majority of these peaks to excitons bound to unidentified structural and surface defects. Most of the structural- and surface-related peaks (at 3.21, 3.32, 3.34, 3.35, 3.38, and 3.42 eV) were observed in Ga polar films. In N polar GaN, we often observed the 3.45 eV peak attributed to excitons bound to the inversion domain interfaces.

Rights

Reshchikov, M. A., Huang, D., Yun, F., et al. Unusual luminescence lines in GaN. Journal of Applied Physics 94, 5623 (2003). Copyright © 2003 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications