Original Publication Date
Journal of Applied Physics
DOI of Original Publication
Date of Submission
A series of sharp intense peaks was observed in the low-temperature photoluminescence spectrum of unintentionally doped GaN in the photon energy range between 3.0 and 3.46 eV. We attributed the majority of these peaks to excitons bound to unidentified structural and surface defects. Most of the structural- and surface-related peaks (at 3.21, 3.32, 3.34, 3.35, 3.38, and 3.42 eV) were observed in Ga polar films. In N polar GaN, we often observed the 3.45 eV peak attributed to excitons bound to the inversion domain interfaces.
Reshchikov, M. A., Huang, D., Yun, F., et al. Unusual luminescence lines in GaN. Journal of Applied Physics 94, 5623 (2003). Copyright © 2003 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications