Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Authors

D. Rosales, Laboratoire Charles Coulomb, Universite Montepellier 2
B. Gil, Laboratoire Charles Coulomb, Universite Montepellier 2
T. Bretagnon, Laboratoire Charles Coulomb, Universite Montepellier 2
B. Guizal, Laboratoire Charles Coulomb, Universite Montepellier 2
F. Zhang, Virginia Commonwealth University
S. Okur, Virginia Commonwealth UniversityFollow
M. Monavarian, Virginia Commonwealth University
N. Izyumskaya, Virginia Commonwealth UniversityFollow
V. Avrutin, Virginia Commonwealth UniversityFollow
Ü Özgür, Virginia Commonwealth UniversityFollow
H. Morkoç, Virginia Commonwealth UniversityFollow
J. H. Leach, Kyma Technologies, Inc.

Document Type

Article

Original Publication Date

2014

Journal/Book/Conference Title

Journal of Applied Physics

Volume

115

Issue

7

DOI of Original Publication

10.1063/1.4865959

Comments

Originally published at http://dx.doi.org/10.1063/1.4865959

Date of Submission

October 2015

Abstract

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.

Rights

Rosales, D., Gil, B., & Bretagnon, T., et al. Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells. Journal of Applied Physics, 115, 073510 (2014). Copyright © 2014 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications