Document Type
Article
Original Publication Date
2015
Journal/Book/Conference Title
Scientific Reports
Volume
5
DOI of Original Publication
10.1038/srep18264
Date of Submission
April 2016
Abstract
We report reversible strain-induced magnetization switching between two stable/metastable states in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically. This portends an ultra-energy-efficient non-volatile “non-toggle” memory.
Rights
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Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1038/srep18264