Document Type
Article
Original Publication Date
2011
Journal/Book/Conference Title
Journal of Applied Physics
Volume
110
DOI of Original Publication
doi:10.1063/1.3646552
Date of Submission
March 2018
Abstract
A quantum-design approach to reduce the Auger losses in two micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6 lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 and represents about a 19-fold reduction in the equivalent “Auger coefficient.”
Is Part Of
VCU Electrical and Computer Engineering Publications
COinS