Document Type
Article
Original Publication Date
2014
Journal/Book/Conference Title
Journal of Vacuum Science and Technology B
Volume
32
DOI of Original Publication
10.1116/1.4867879
Date of Submission
July 2018
Abstract
In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.
Rights
© American Vacuum Society
Is Part Of
VCU Electrical and Computer Engineering Publications
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Process Control and Systems Commons, Semiconductor and Optical Materials Commons
Comments
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
The following article appeared in Journal of Vacuum Science & Technology B 32, 02C118 (2014); doi: http://dx.doi.org/10.1116/1.4867879