Observation of electronic Raman scattering from Mg-doped wurtzite GaN

Authors

K. T. Tsen, Arizona State University at the Tempe Campus
C. Koch, Arizona State University at the Tempe Campus
Y. Chen, Arizona State University at the Tempe Campus
Hadis Morkoç, Virginia Commonwealth UniversityFollow
J. Li, Kansas State University
J. Y. Lin, Kansas State University
H. X. Jiang, Kansas State University

Document Type

Article

Original Publication Date

2000

Journal/Book/Conference Title

Applied Physics Letters

Volume

76

Issue

20

DOI of Original Publication

10.1063/1.126507

Comments

Originally published at http://dx.doi.org/10.1063/1.126507

Date of Submission

April 2015

Abstract

Electronic Raman scattering experiments have been carried out on both molecular beam epitaxy and metal-organic chemical vapor deposition-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (full width at half maximum≅15 cm−1)observed at around 841 cm−1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. Our experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about one-half of its binding energy.

Rights

Tsen, K.T., Koch, C., Chen, Y., et al. Observation of electronic Raman scattering from Mg-doped wurtzite GaN. Applied Physics Letters, 76, 2889 (2000). Copyright © 2000 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications