Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Electronic Raman scattering experiments have been carried out on both molecular beam epitaxy and metal-organic chemical vapor deposition-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (full width at half maximum≅15 cm−1)observed at around 841 cm−1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. Our experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about one-half of its binding energy.
Tsen, K.T., Koch, C., Chen, Y., et al. Observation of electronic Raman scattering from Mg-doped wurtzite GaN. Applied Physics Letters, 76, 2889 (2000). Copyright © 2000 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications