Document Type

Article

Original Publication Date

2001

Journal/Book/Conference Title

Applied Physics Letters

Volume

78

Issue

20

DOI of Original Publication

10.1063/1.1371961

Comments

Originally published at http://dx.doi.org/10.1063/1.1371961

Date of Submission

April 2015

Abstract

We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV and a green luminescence (GL) band at about 2.43 eV. In contrast to epitaxial GaN samples prepared by both vapor-phase and molecular-beam epitaxy, the YL in the sample studied is weak and can be easily saturated. However, the GL is dominant. We attribute the GL to isolated defects involving galliumvacancies and the YL to the same defect, but bound to dislocations, or possibly to structuralsurface defects.

Rights

Reshchikov, M.A., Morkoç, H., Park, S.S., et al. Yellow and green luminescence in a freestanding GaN template. Applied Physics Letters, 78, 3041 (2001). Copyright © 2001 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications

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