Document Type
Article
Original Publication Date
2001
Journal/Book/Conference Title
Applied Physics Letters
Volume
78
Issue
20
DOI of Original Publication
10.1063/1.1371961
Date of Submission
April 2015
Abstract
We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV and a green luminescence (GL) band at about 2.43 eV. In contrast to epitaxial GaN samples prepared by both vapor-phase and molecular-beam epitaxy, the YL in the sample studied is weak and can be easily saturated. However, the GL is dominant. We attribute the GL to isolated defects involving galliumvacancies and the YL to the same defect, but bound to dislocations, or possibly to structuralsurface defects.
Rights
Reshchikov, M.A., Morkoç, H., Park, S.S., et al. Yellow and green luminescence in a freestanding GaN template. Applied Physics Letters, 78, 3041 (2001). Copyright © 2001 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1371961