Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain

Authors

S. K. Zhang, The City College of the City University of New York
W. B. Wang, The City College of the City University of New York
I. Shtau, The City College of the City University of New York
F. Yun, Virginia Commonwealth University
L. He, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow
X. Zhou, The City College of the City University of New York
M. Tamargo, The City College of the City University of New York
R. R. Alfano, The City College of the City University of New York

Document Type

Article

Original Publication Date

2002

Journal/Book/Conference Title

Applied Physics Letters

Volume

81

Issue

25

DOI of Original Publication

10.1063/1.1526166

Comments

Originally published at http://dx.doi.org/10.1063/1.1526166

Date of Submission

April 2015

Abstract

We report on a backilluminated GaN/Al0.18Ga0.82Nheterojunction ultraviolet (UV)photodetector with high internal gain based on metal-semiconductor-metal structures. A narrow band pass spectral response between 365 and 343 nm was achieved. When operating in dc mode, the responsivity reaches up to the order of 102 A/W under weak UVillumination, which is due to enormous internal gain up to 103. The linear dependence of photocurrent on bias and its square root dependence on optical power are found and explained by a trapping and recombination model. The high photocurrent gain is attributed to trapping and recombination centers with an acceptor character induced by dislocations in GaN.

Rights

Zhang, S.K., Wang, W.B., Shtau, I., et al. Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain. Applied Physics Letters, 81, 4862 (2002). Copyright © 2002 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications