Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
We report on a backilluminated GaN/Al0.18Ga0.82Nheterojunction ultraviolet (UV)photodetector with high internal gain based on metal-semiconductor-metal structures. A narrow band pass spectral response between 365 and 343 nm was achieved. When operating in dc mode, the responsivity reaches up to the order of 102 A/W under weak UVillumination, which is due to enormous internal gain up to 103. The linear dependence of photocurrent on bias and its square root dependence on optical power are found and explained by a trapping and recombination model. The high photocurrent gain is attributed to trapping and recombination centers with an acceptor character induced by dislocations in GaN.
Zhang, S.K., Wang, W.B., Shtau, I., et al. Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain. Applied Physics Letters, 81, 4862 (2002). Copyright © 2002 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications