Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Authors

J. H. Leach, Virginia Commonwealth UniversityFollow
M. Wu., Virginia Commonwealth University
X. Ni, Virginia Commonwealth University
X. Li, Virginia Commonwealth University
J. Xie, Virginia Commonwealth University
Ü. Özgür, Virginia Commonwealth UniversityFollow
Hadis Morkoç, Virginia Commonwealth UniversityFollow
T. Paskova, Kyma Technologies, Inc.
E. Preble, Kyma Technologies, Inc.
K. R. Evans, Kyma Technologies, Inc.
Chang-Zhi Lu, Beijing University of Technology

Document Type

Article

Original Publication Date

2010

Journal/Book/Conference Title

Applied Physics Letters

Volume

96

Issue

10

DOI of Original Publication

10.1063/1.3358192

Comments

Originally published at http://dx.doi.org/10.1063/1.3358192

Date of Submission

April 2015

Abstract

We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostructures grown on low-defect-density bulk Fe-doped GaN substrates. We achieved unity current gain cutoff frequencies of 14.3 and 23.7 GHz for devices with gate lengths of 1 and 0.65 μm, respectively. Measurements as a function of applied bias allow us to estimate the average carrier velocity in the channel to be ∼1.0×107 cm/sec for a 1 μm device. Additionally, we found nearly no gate lag in the devices, which is considered a precondition for good performance under large signal operation.

Rights

Leach, J.H., Wu, M., Ni, X., et al. Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates. Applied Physics Letters, 96, 102109 (2010). Copyright © 2010 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications