Document Type
Article
Original Publication Date
2003
Journal/Book/Conference Title
Applied Physics Letters
Volume
82
Issue
18
DOI of Original Publication
10.1063/1.1571982
Date of Submission
April 2015
Abstract
Electric-field-induced heating is studied using noise measurements in n-type GaN grown on sapphire substrates. The measured electron temperature is found to be an order of magnitude higher than what is expected based on calculations of electron–phonon coupling via acoustic deformation potential scattering processes in GaN. The discrepancy may be explained by a large thermal boundary resistance between the GaN film and the sapphire substrate.
Rights
Eckhause, T.A., Süzer, Ö., Kurdak, Ç., et al. Electric-field-induced heating and energy relaxation in GaN. Applied Physics Letters, 82, 3035 (2003). Copyright © 2003 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1571982