Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Electric-field-induced heating is studied using noise measurements in n-type GaN grown on sapphire substrates. The measured electron temperature is found to be an order of magnitude higher than what is expected based on calculations of electron–phonon coupling via acoustic deformation potential scattering processes in GaN. The discrepancy may be explained by a large thermal boundary resistance between the GaN film and the sapphire substrate.
Eckhause, T.A., Süzer, Ö., Kurdak, Ç., et al. Electric-field-induced heating and energy relaxation in GaN. Applied Physics Letters, 82, 3035 (2003). Copyright © 2003 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications