Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

Authors

Y. Liu, University of Minnesota
M. Z. Kauser, University of Minnesota
M. I. Nathan, University of Minnesota
P. P. Ruden, University of Minnesota
S. Dogan, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow
S. S. Park, Samsung Advanced Institute of Technology
K. Y. Lee, Samsung Advanced Institute of Technology

Document Type

Article

Original Publication Date

2004

Journal/Book/Conference Title

Applied Physics Letters

Volume

84

Issue

12

DOI of Original Publication

10.1063/1.1689392

Comments

Originally published at http://dx.doi.org/10.1063/1.1689392

Date of Submission

April 2015

Abstract

We report measurements of the Schottky barrier heights of Ni/Au contacts on Ga-polarity and N-polarity n-GaN under hydrostatic pressure and applied in-plane uniaxial stress. Under hydrostatic pressure the two different polarities of GaN yield significantly different rates of Schottky barrier height increase with increasing pressure. Uniaxial stress parallel to the surface affects the Schottky barrier height only minimally. The observed changes in barrier height under stress are attributed to a combination of band structure and piezoelectric effects.

Rights

Liu, Y., Kauser, M.Z., Nathan, M.I., et al. Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN. Applied Physics Letters, 84, 2112 (2004). Copyright © 2004 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications