Document Type
Article
Original Publication Date
2009
Journal/Book/Conference Title
Applied Physics Letters
Volume
95
Issue
21
DOI of Original Publication
10.1063/1.3266862
Date of Submission
April 2015
Abstract
High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire(112¯0) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30°, which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [112¯0] and BST [110]/MgO [110]//ZnO [11¯00]. Capacitance-voltage measurements performed on BST coplanar interdigitated capacitor structures revealed a high dielectric tunability of up to 84% at 1 MHz.
Rights
Xiao, B., Liu, H., Avrutin, V., et al. Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer. Applied Physics Letters, 95, 212901 (2009). Copyright © 2009 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.3266862