Document Type

Article

Original Publication Date

2009

Journal/Book/Conference Title

Applied Physics Letters

Volume

95

Issue

11

DOI of Original Publication

10.1063/1.3225157

Comments

Originally published at http://dx.doi.org/10.1063/1.3225157

Date of Submission

April 2015

Abstract

The concept of nonpolar (11¯00) m-plane GaN on Si substrates has been demonstrated by initiating growth on the vertical (1¯1¯1) sidewalls of patterned Si(112) substrates using metalorganic chemical vapor deposition. The Si(112) substrates were wet-etched to expose {111} planes using stripe-patterned SiNx masks oriented along the [1¯10] direction. Only the vertical Si(1¯1¯1) sidewalls were allowed to participate in GaNgrowth by masking other Si{111} planes using SiO2, which led to m-plane GaNfilms.Growth initiating on the Si(1¯1¯1) planes normal to the surface was allowed to advance laterally and also vertically toward full coalescence. InGaN double heterostructure active layers grown on these m-GaN templates on Si exhibited two times higher internal quantum efficiencies as compared to their c-plane counterparts at comparable carrier densities. These results demonstrate a promising method to obtain high-quality nonpolar m-GaN films on large area, inexpensive Si substrates.

Rights

Ni, X., Wu, M., Lee, J., et al. Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition. Applied Physics Letters, 95, 111102 (2009). Copyright © 2009 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications

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