Document Type
Article
Original Publication Date
2009
Journal/Book/Conference Title
Applied Physics Letters
Volume
95
Issue
11
DOI of Original Publication
10.1063/1.3225157
Date of Submission
April 2015
Abstract
The concept of nonpolar (11¯00) m-plane GaN on Si substrates has been demonstrated by initiating growth on the vertical (1¯1¯1) sidewalls of patterned Si(112) substrates using metalorganic chemical vapor deposition. The Si(112) substrates were wet-etched to expose {111} planes using stripe-patterned SiNx masks oriented along the [1¯10] direction. Only the vertical Si(1¯1¯1) sidewalls were allowed to participate in GaNgrowth by masking other Si{111} planes using SiO2, which led to m-plane GaNfilms.Growth initiating on the Si(1¯1¯1) planes normal to the surface was allowed to advance laterally and also vertically toward full coalescence. InGaN double heterostructure active layers grown on these m-GaN templates on Si exhibited two times higher internal quantum efficiencies as compared to their c-plane counterparts at comparable carrier densities. These results demonstrate a promising method to obtain high-quality nonpolar m-GaN films on large area, inexpensive Si substrates.
Rights
Ni, X., Wu, M., Lee, J., et al. Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition. Applied Physics Letters, 95, 111102 (2009). Copyright © 2009 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.3225157