Author ORCID Identifier


Defense Date


Document Type


Degree Name

Doctor of Philosophy


Physics and Applied Physics

First Advisor

Shiv Khanna

Second Advisor

Arthur Reber


Phosphorene is a two-dimensional electron poor p-type semiconductor with high carrier mobility and great promise for applications in electronics and optoelectronics. As the main theme in this dissertation, the following work represents different investigations of various electronic properties associated with phosphorene. Most notable are the findings on charge transfer doping with metal-chalcogenide superatoms which displays novel control of the two most important properties of a semiconductor – the band gap energy and the nature of carriers. By tuning the width of the gap and p-/n-type character of conduction, we gain control over a material’s capacity to play a certain role upon incorporation into a device setting. For example, control of bandgap characteristics on the nanometer and sub-nanometer scale is an integral next step for scientists and engineers to move beyond the current size limit of logic transistors. Additionally, improving the function of optoelectronics leading to a variety of positive enhancements in sensing devices spanning a wide array of fields from specialized medical devices to ubiquitous consumer electronics. Another possibility is fine-tuning photovoltaic devices to increase efficiency or expand the energy range which a solar panel may harvest light, subsequently increasing overall output – a vital component to our transition and continued improvement of renewable energy technologies.


© Ryan Lambert

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