Document Type
Article
Original Publication Date
2014
Journal/Book/Conference Title
Applied Physics Letters
Volume
104
Issue
3
DOI of Original Publication
10.1063/1.4862790
Date of Submission
March 2015
Abstract
Many point defects in GaN responsible for broad photoluminescence (PL) bands remain unidentified. Their presence in thick GaN layers grown by hydride vapor phase epitaxy (HVPE) detrimentally affects the material quality and may hinder the use of GaN in high-power electronic devices. One of the main PL bands in HVPE-grown GaN is the red luminescence (RL) band with a maximum at 1.8 eV. We observed the fine structure of this band with a zero-phonon line (ZPL) at 2.36 eV, which may help to identify the related defect. The shift of the ZPL with excitation intensity and the temperature-related transformation of the RL band fine structure indicate that the RL band is caused by transitions from a shallow donor (at low temperature) or from the conduction band (above 50 K) to an unknown deep acceptor having an energy level 1.130 eV above the valence band.
Rights
Reschchikov, M.A., Usikov, A., and Helava, H., et al., Fine structure of the red luminescence band in undoped GaN. Applied Physics Letters, 104, 032103 (2014). Copyright © 2014 AIP Publishing LLC.
Is Part Of
VCU Physics Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.4862790