Document Type
Article
Original Publication Date
2014
Journal/Book/Conference Title
Journal of Applied Physics
Volume
115
DOI of Original Publication
10.1063/1.4838038
Date of Submission
April 2015
Abstract
Mechanisms of thermal quenching of photoluminescence (PL) related to defects insemiconductors are analyzed. We conclude that the Schön-Klasens (multi-center) mechanism of the thermal quenching of PL is much more common for defects in III–V and II–VI semiconductorsas compared to the Seitz-Mott (one-center) mechanism. The temperature dependencies of PLare simulated with a phenomenological model. In its simplest version, three types of defects are included: a shallow donor, an acceptor responsible for the PL, and a nonradiative center that has the highest recombination efficiency. The case of abrupt and tunable thermal quenching ofPL is considered in more detail. This phenomenon is predicted to occur in high-resistivitysemiconductors. It is caused by a sudden redirection of the recombination flow from a radiative acceptor to a nonradiative defect.
Rights
Copyright © 2014 AIP Publishing LLC. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Originally published by the American Institute of Physics at http://dx.doi.org/10.1063/1.4838038.
Is Part Of
VCU Physics Publications
Comments
Originally published by the American Institute of Physics at http://dx.doi.org/10.1063/1.4838038.