Document Type

Article

Original Publication Date

2013

Journal/Book/Conference Title

Physical Review B

Volume

87

Issue

11

DOI of Original Publication

10.1103/PhysRevB.87.115205

Comments

Originally published by the American Physical Society at: http://dx.doi.org/10.1103/PhysRevB.87.115205

Date of Submission

April 2015

Abstract

We have studied the thermal quenching of the ultraviolet luminescence band with a maximum at about 3.25 eV in p-type Mg-doped GaN. The characteristic temperature of the thermal quenching of photoluminescence (PL) gradually shifted to higher temperatures with increasing excitation intensity. This effect is explained by a population inversion of charge carriers at low temperatures, which suddenly converts into a quasiequilibrium population as the temperature increases above the characteristic value. Tunable quenching of PL has been observed only in some of the GaN:Mg samples. The absence of the tunable quenching of PL in another group of GaN:Mg samples is preliminarily attributed to different types of dominant nonradiative defects in the two groups of samples.

Rights

Reshchikov, M.A., McNamara, J.D., Fernández-Garrido, S., et al. Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN. Physical Review B, 87, 115205 (2013). Copyright © 2013 American Physical Society.

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