Document Type
Article
Original Publication Date
2006
Journal/Book/Conference Title
Journal of Applied Physics
Volume
99
Issue
11
DOI of Original Publication
10.1063/1.2200742
Date of Submission
October 2015
Abstract
The current-voltage characteristics of n-GaN∕u-AlGaN∕n-GaN heterostructure devices are investigated for potential pressure sensor applications. Model calculations suggest that the current decreases with pressure as a result of the piezoelectric effect, and this effect becomes more significant with thicker AlGaN layers and increasing AlN composition. The change in current with pressure is shown to be highly sensitive to the change in interfacial polarization charge densities. The concept is verified by measuring the current versus voltage characteristics of an n-GaN∕u-Al0.2Ga0.8N∕n-GaN device under hydrostatic pressure over the range of 0–5 kbars. The measured current is found to decrease approximately linearly with applied pressure in agreement with the model results. A gauge factor, which is defined as the relative change in current divided by the in-plane strain, approaching 500 is extracted from the data, demonstrating the considerable potential of these devices for pressure sensing applications.
Rights
Liu, Y., Kauser, M. Z., Schroepfer, D. D., et al. Effect of hydrostatic pressure on the current-voltage characteristics of GaN∕AlGaN∕GaN heterostructure devices. Journal of Applied Physics 99, 113706 (2006). Copyright © 2006 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.2200742