Document Type
Article
Original Publication Date
2006
Journal/Book/Conference Title
Applied Physics Letters
Volume
88
Issue
12
DOI of Original Publication
10.1063/1.2161388
Date of Submission
April 2015
Abstract
Changing the ratio of carbon to silicon during the epitaxial 4H–SiC growth is expected to alter the dominant deep level trap, which has been attributed to a native defect. The C∕Si ratio was changed from one to six during epitaxialgrowth of SiC. Diodes fabricated on the epitaxial layer were then characterized using current-voltage and deep level transient spectroscopy. The single peak at 340K (Z1/Z2 peak), was deconvolved into two traps, closely spaced in energy. The concentration of one of the Z1/Z2 traps decreased with increasing C∕Si ratio. This result opposes theoretical predictions of carboninterstitial components, and supports assignment to a silicon antisite or carbonvacancy relationship. The concentration of the second component of the peak at 340K did not depend on the C∕Si ratio, which would indicate an impurity in an interstitial site.
Rights
Litton, C.W., Johnstone, D., Akarca-Biyikli, S., et al. Effect of C∕Si ratio on deep levels in epitaxial 4H–SiC. Applied Physics Letters, 88, 121914 (2006). Copyright © 2006 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.2161388