Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Line and point defect reductions in thin GaN epilayers with single and double in situ SiNxnanonetworks on sapphire substrates grown by metal-organic chemical vapor deposition were studied by deep-level transient spectroscopy(DLTS), augmented by x-ray diffraction(XRD), and low temperature photoluminescence(PL). All samples measured by DLTS in the temperature range from 80to400K exhibited trap A (peak at ∼325K) with an activation energy of 0.55–0.58eV, and trap B (peak at ∼155K) with an activation energy of 0.21–0.28eV. The concentrations of both traps were much lower for layers with SiNx nanonetwork compared to the reference sample. The lowest concentration was achieved for the sample with 6mindeposition SiNx nanonetwork, which was also lower than that for a sample prepared by conventional epitaxial lateral overgrowth. In concert with the DLTS results, PL and XRD linewidths were reduced for the samples with SiNx network indicating improved material quality. Consistent trend among optical, structural, and DLTS results suggests that SiNxnetwork can effectively reduce both point and line defects.
Xie, J., Chevtchenkp, S.A., Ozgur, U., et al. Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiNx nanonetwork. Applied Physics Letters, 90, 292112 (2007). Copyright © 2007 AIP Publishing LLC.
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VCU Electrical and Computer Engineering Publications