Document Type
Article
Original Publication Date
2005
Journal/Book/Conference Title
Applied Physics Letters
Volume
86
Issue
4
DOI of Original Publication
10.1063/1.1851005
Date of Submission
April 2015
Abstract
The spatial distribution and emission properties of small clusters of GaNquantum dots in an AlN matrix are studied using high-resolution electron and optical microscopy. High-resolution transmission electron microscopy reveals near vertical correlation among the GaNdots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of ∼50–60nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10K revealed emission from individual dots, which exhibits size distribution of GaNdots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaNquantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [101¯1¯] facets.
Rights
Neogi, A., Gorman, B.P., Morkoç, H., et al. Near-field optical spectroscopy and microscopy of self-assembled GaN∕AlN nanostructures. Applied Physics Letters, 86, 043103 (2005). Copyright © 2005 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1851005