Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots

Authors

Il-Kyu Park, Gwangju Institute of Science and Technology
Min-Ki Kwon, Gwangju Institute of Science and Technology
Sung-Ho Baek, Gwangju Institute of Science and Technology
Young-Woo Ok, Gwangju Institute of Science and Technology
Tae-Yeon Seong, Gwangju Institute of Science and Technology
Seong-Ju Park, Gwangju Institute of Science and TechnologyFollow
Yoon-Seok Kim, Korea Photonics Technology Institute
Yong-Tae Moon, Virginia Commonwealth University
Dong-Joon Kim, Samsung Electro-Mechanics Co., Ltd.

Document Type

Article

Original Publication Date

2005

Journal/Book/Conference Title

Applied Physics Letters

Volume

87

Issue

6

DOI of Original Publication

10.1063/1.2008365

Comments

Originally published at http://dx.doi.org/10.1063/1.2008365

Date of Submission

April 2015

Abstract

The enhancement of phase separation in the InGaN layer grown on a GaN layer with a rough surface was investigated for the formation of self-assembled In-rich quantum dots(QDs) in the InGaN layer. Transmission electron microscopy images showed that In-rich QDs with a size of 2–5 nm were formed even in an InGaN layer with a low indium content, and a layer thickness less than the critical thickness. The room-temperature photoluminescence(PL) spectrum of this layer showed emission peaks corresponding to In-rich QDs. The temperature-dependent PL spectra showed dominant peak shifts to the lower energy side, indicating that the self-assembled In-rich QDs are formed in the InGaN layer grown on a rough GaNsurface and that the carriers are localized in In-rich QDs.

Rights

Park, I.-K., Kwon, M.-K., Baek, S.-H., et al. Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots. Applied Physics Letters, 87, 061906 (2005). Copyright © 2005 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications