Document Type
Article
Original Publication Date
2005
Journal/Book/Conference Title
Journal of Applied Physics
Volume
97
Issue
12
DOI of Original Publication
10.1063/1.1937477
Date of Submission
October 2015
Abstract
Cadmium sulfide nanowires of 10‐nm diameter, electrodeposited in porous anodic alumina films, exhibit an electronic bistability that can be harnessed for nonvolatile memory. The current–voltage characteristics of the wires show two stable conductance states that are well separated (conductances differ by more than four orders of magnitude) and long lived (longevity>1 yr at room temperature). These two states can encode binary bits 0 and 1. It is possible to switch between them by varying the voltage across the wires, thus “writing” data. Transport behavior of this system has been investigated at different temperatures in an effort to understand the origin of bistability, and a model is presented to explain the observed features. Based on this model, we estimate that about 40 trapped electrons per nanowire are responsible for the bistability.
Rights
Pokalyakin, V., Tereshin, S., Varfolomeev, A., et al. Proposed model for bistability in nanowire nonvolatile memory. Journal of Applied Physics 97, 124306 (2005). Copyright © 2005 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1937477