Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Authors

Tomasz J. Ochalski, Université de Montpellier
Bernard Gil, Université de Montpellier
Pierre Lefebvre, Université de Montpellier
Nicolas Grandjean, Centre de Recherche sur l’Hétéro-Épitaxie et ses Applications
Mathieu Leroux, Centre de Recherche sur l’Hétéro-Épitaxie et ses Applications
Jean Massies, Centre de Recherche sur l’Hétéro-Épitaxie et ses Applications
Shuji Nakamura, Nichia Chemical Limited
Hadis Morkoç, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

1999

Journal/Book/Conference Title

Applied Physics Letters

Volume

74

Issue

22

DOI of Original Publication

10.1063/1.123342

Comments

Originally published at http://dx.doi.org/10.1063/1.123342

Date of Submission

April 2015

Abstract

Room temperature photoreflectance investigations have been performed on a series of AlGaN layers grown both by metalorganic vapor phase epitaxy and molecular beam epitaxy on c-plane sapphire substrates. The aluminum composition was ranging between 0% and 20%, and was determined independently in the different growth laboratories, by various methods. It is found that within the experimental uncertainty, there is no detectable bowing parameter in these alloys. This contradicts some previous experimental investigations and confirms other ones.

Rights

Ochalski, T.J., Gil, B., Lefebvre, P., et al. Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN. Applied Physics Letters, 74, 3353 (1999). Copyright © 1999 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications