Document Type
Article
Original Publication Date
1998
Journal/Book/Conference Title
Applied Physics Letters
Volume
72
Issue
18
DOI of Original Publication
10.1063/1.121274
Date of Submission
April 2015
Abstract
Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by deep-level transient spectroscopy as a function of growth conditions. Si-doped GaN samples grown on a Si-doped n+-GaN contact layer at 800 °C show a dominant trap C1 with activation energyET=0.44 eV and capture cross-section σT=1.3×10−15 cm−2, while samples grown at 750 °C on an undoped semi-insulating GaN buffer show prominent traps D1and E1, with ET=0.20 eV and σT=8.4×10−17 cm2, and ET=0.21 eV and σT=1.6×10−14 cm2, respectively. Trap E1 is believed to be related to a N-vacancy defect, since the Arrhenius signature for E1 is very similar to the previously reported trap E, which is produced by 1-MeV electron irradiation in GaN materials grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy.
Rights
Fang, Z.-Q., Look, D.C., Kim, W., et al. Deep centers in n-GaN grown by reactive molecular beam epitaxy. Applied Physics Letters, 72, 2277 (1998). Copyright © 1998 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.121274