Document Type

Article

Original Publication Date

2002

Journal/Book/Conference Title

Applied Physics Letters

Volume

81

Issue

24

DOI of Original Publication

10.1063/1.1527994

Comments

Originally published at http://dx.doi.org/10.1063/1.1527994

Date of Submission

April 2015

Abstract

The operation of backilluminated ultraviolet (UV)photodetector based on GaN/Al0.27Ga0.73Nmultiple quantum wells(MQWs) is reported. The MQW structure was deposited on a 1-μm-thick Al0.35Ga0.65Nbuffer layer which was epitaxied on a sapphire substrate. Coplanar Ohmic contacts were made on the top side of the MQW structure. By illuminating the Ohmic contact positions from the backside of the detector, a flat and narrow band spectral response is achieved in the UV wavelength range from 297 nm to 352 nm. The electron-heavy hole absorption in the MQW region produces the sharp long-wavelength cutoff at 352 nm and the band-to-band absorption of the Al0.35Ga0.65Nbuffer layer introduces the sharp short-wavelength cutoff at 297 nm. The polarization-induced electric fields result in a redshift of the long-wavelength cutoff. The response time is measured to be RC limited and determined to be 5 μs at a 50 Ω load.

Rights

Zhang, S.K., Wang, W.B., Yun, F., et al. Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells. Applied Physics Letters, 81, 4628, (2002). Copyright © 2002 AIP Publishing LLC.

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VCU Electrical and Computer Engineering Publications

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