Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

Authors

M. A. Reshchikov, Virginia Commonwealth UniversityFollow
M. Foussekis, Virginia Commonwealth University
J. D. McNamara, Virginia Commonwealth UniversityFollow
A. Behrends, Braunschweig University of Technology
A. Bakin, Braunschweig University of Technology
A. Waag, Braunschweig University of Technology

Document Type

Article

Original Publication Date

2012

Journal/Book/Conference Title

Journal of Applied Physics

Volume

111

Issue

7

DOI of Original Publication

10.1063/1.3699312

Comments

Originally published at http://dx.doi.org/10.1063/1.3699312

Date of Submission

October 2015

Abstract

The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the Zn_Ga acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90% was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the Zn_Ga acceptors and free electrons were also estimated from the photoluminescence measurements.

Rights

Reshchikov, M. A., Foussekis, M., & McNamara, J. D., et al. Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn. Journal of Applied Physics, 111, 073106 (2012). Copyright © 2012 American Institute of Physics.

Is Part Of

VCU Physics Publications