Document Type

Article

Original Publication Date

2012

Journal/Book/Conference Title

Physical Review B

Volume

85

Issue

24

DOI of Original Publication

10.1103/PhysRevB.85.245203

Comments

Originally published by the American Physical Society at: http://dx.doi.org/10.1103/PhysRevB.85.245203

Date of Submission

April 2015

Abstract

We observed tunable two-step thermal quenching of photoluminescence in high-resistivity Zn-doped GaN. The characteristic temperatures of the first and second steps increase with increasing excitation intensity. The effect is explained within a phenomenological model involving shallow donors, nonradiative deep donors, and two types of acceptors.

Rights

Reshchikov, M.A. Two-step thermal quenching of photoluminescence in Zn-doped GaN. Physical Review B, 85, 245203 (2012). Copyright © 2012 American Physical Society.

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