Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

Authors

Michael A. Reshchikov, Virginia Commonwealth UniversityFollow
A. G. Willyard, Virginia Commonwealth University
A. Behrends, Institute of Semiconductor Technology
A. Bakin, Institute of Semiconductor Technology
A. Waag, Institute of Semiconductor Technology

Document Type

Article

Original Publication Date

2011

Journal/Book/Conference Title

Applied Physics Letters

Volume

99

Issue

17

DOI of Original Publication

10.1063/1.3655678

Comments

Originally published at http://dx.doi.org/10.1063/1.3655678

Date of Submission

March 2015

Abstract

We report on the fabrication of GaN co-doped with silicon and zinc by metalorganic vapor phase epitaxy and a detailed study of photoluminescence in this material. We observe an exceptionally high absolute internal quantum efficiency of blue photoluminescence in GaN:Zn,Si. The value of0.93±0.04 has been obtained from several approaches based on rate equations.

Rights

Reshchikov, M.A., Willyard, A.G., Behrends, A., et al. Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si. Applied Physics Letters, 99, 171110 (2011). Copyright © 2011 AIP Publishing LLC.

Is Part Of

VCU Physics Publications