Document Type
Article
Original Publication Date
2011
Journal/Book/Conference Title
Physical Review B
Volume
84
Issue
7
DOI of Original Publication
10.1103/PhysRevB.84.075212
Date of Submission
April 2015
Abstract
Tunable and abrupt thermal quenching of photoluminescence by increasing temperature has been observed for the blue band in high-resistivity Zn-doped GaN. The photoluminescence intensity dropped by several orders of magnitude within a few Kelvins, and the temperature at which that drop occurred could be tuned by changing the incident light intensity. Modeling the system with rate equations for competing electron-hole recombination flows through three defect species, one of which is a nonradiative deep donor, gives results consistent with these observations.
Rights
Reshchikov, M.A., Kvasov, A.A., Bishop, M.F., et al. Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN. Physical Review B, 84, 075212 (2011). Copyright © 2011 American Physical Society.
Is Part Of
VCU Physics Publications
Comments
Originally published by the American Physical Society at: http://dx.doi.org/10.1103/PhysRevB.84.075212