Document Type
Article
Original Publication Date
2014
Journal/Book/Conference Title
Physical Review B
Volume
90
DOI of Original Publication
10.1103/PhysRevB.90.035207
Date of Submission
April 2015
Abstract
A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (VN). We propose that transitions of electrons from the conduction band to the +/2+ transition level of the VN defect are responsible for the GL2 band in high-resistivity undoped and Mg-doped GaN.
Rights
©2014 American Physical Society
Is Part Of
VCU Physics Publications
Comments
Originally published by the American Physical Society at http://dx.doi.org/10.1103/PhysRevB.90.035207.