Time-resolved photoluminescence from defects in n-type GaN

Authors

Michael A. Reshchikov, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2014

Journal/Book/Conference Title

Journal of Applied Physics

Volume

115

Issue

10

DOI of Original Publication

10.1063/1.4867043

Comments

Originally published at http://dx.doi.org/10.1063/1.4867043

Date of Submission

October 2015

Abstract

Point defects in GaN were studied with time-resolved photoluminescence (PL). The effects of temperature and excitation intensity on defect-related PL have been investigated theoretically and experimentally. A phenomenological model, based on rate equations, explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in n-type semiconductors.

Rights

Reshchikov, M. A. Time-resolved photoluminescence from defects in n-type GaN. Journal of Applied Physics, 115, 103503 (2014). Copyright © 2014 AIP Publishing LLC.

Is Part Of

VCU Physics Publications