Document Type
Article
Original Publication Date
2014
Journal/Book/Conference Title
Journal of Applied Physics
Volume
115
DOI of Original Publication
10.1063/1.4867043
Date of Submission
April 2015
Abstract
Point defects in GaN were studied with time-resolved photoluminescence (PL). The effects of temperature and excitation intensity on defect-related PL have been investigated theoretically and experimentally. A phenomenological model, based on rate equations, explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in n-type semiconductors.
Rights
Copyright © 2014 AIP Publishing LLC. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Originally published by the American Institute of Physics at http://dx.doi.org/10.1063/1.4867043.
Is Part Of
VCU Physics Publications
Comments
Originally published by the American Institute of Physics at http://dx.doi.org/10.1063/1.4867043.