"Time-resolved photoluminescence from defects in n-type GaN" by Michael A. Reshchikov
 

Document Type

Article

Original Publication Date

2014

Journal/Book/Conference Title

Journal of Applied Physics

Volume

115

DOI of Original Publication

10.1063/1.4867043

Comments

Originally published by the American Institute of Physics at http://dx.doi.org/10.1063/1.4867043.

Date of Submission

April 2015

Abstract

Point defects in GaN were studied with time-resolved photoluminescence (PL). The effects of temperature and excitation intensity on defect-related PL have been investigated theoretically and experimentally. A phenomenological model, based on rate equations, explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in n-type semiconductors.

Rights

Copyright © 2014 AIP Publishing LLC. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Originally published by the American Institute of Physics at http://dx.doi.org/10.1063/1.4867043.

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VCU Physics Publications

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