Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
The enhancement of phase separation in the InGaN layer grown on a GaN layer with a rough surface was investigated for the formation of self-assembled In-rich quantum dots(QDs) in the InGaN layer. Transmission electron microscopy images showed that In-rich QDs with a size of 2–5 nm were formed even in an InGaN layer with a low indium content, and a layer thickness less than the critical thickness. The room-temperature photoluminescence(PL) spectrum of this layer showed emission peaks corresponding to In-rich QDs. The temperature-dependent PL spectra showed dominant peak shifts to the lower energy side, indicating that the self-assembled In-rich QDs are formed in the InGaN layer grown on a rough GaNsurface and that the carriers are localized in In-rich QDs.
Park, I.-K., Kwon, M.-K., Baek, S.-H., et al. Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots. Applied Physics Letters, 87, 061906 (2005). Copyright © 2005 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications