Submissions from 1998
Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells, H. S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and Hadis Morkoç
Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy, Wook Kim, A. E. Botchkarev, H. Morkoç, Z.-Q. Fang, D. C. Look, and David J. Smith
Optical modes within III-nitride multiple quantum well microdisk cavities, R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, Hadis Morkoç, and M. A. Khan
Deep level defects in n-type GaN grown by molecular beam epitaxy, C. D. Wang, L. S. Yu, S. S. Lau, E. T. Yu, W. Kim, A. E. Botchkarev, and Hadis Morkoç
Plasma heating in highly excited GaN/AlGaN multiple quantum wells, K. C. Zeng, R. Mair, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and Hadis Morkoç