Submissions from 2010
Dominant spin relaxation mechanism in compound organic semiconductors, Supriyo Bandyopadhyay
Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure, H. Cheng, C. Kurdak, J. H. Leach, M. Wu, and Hadis Morkoç
Electrically and magnetically tunable phase shifters based on a barium strontium titanate-yttrium iron garnet layered structure, J. H. Leach, H. Liu, V. Avrutin, E. Rowe, Ü. Özgür, H. Morkoç, Y.-Y. Song, and M. Wu
Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3, J. H. Leach, H. Liu, V. Avrutin, B. Xiao, Ü. Özgür, H. Morkoç, J. Das, Y. Y. Song, and C. E. Patton
Bias dependent two-channel conduction in InAlN/AlN/GaN structures, J. H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D. A. Cullen, D. J. Smith, H. Cheng, Ç. Kurdak, J. R. Meyer, and I. Vurgaftman
Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates, J. H. Leach, M. Wu., X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, T. Paskova, E. Preble, K. R. Evans, and Chang-Zhi Lu
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates, J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, and K. R. Evans
Surface plasmon enhanced UV emission in AlGaN/GaN quantum well, J. Lin, A. Mohammadizia, A. Neogi, Hadis Morkoç, and M. Ohtsu
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes, X. Ni, X. Li, J. Lee, S. Liu, Vitaliy Avrutin, Ü. Özgür, Hadis Morkoç, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them, X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, and A. Matulionis
Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors, Lin Zhou, Jacob H. Leach, Xianfeng Ni, Hadis Morkoç, and David J. Smith
Submissions from 2009
Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields, L. Ardaravičius, M. Ramonas, J. Liberis, O. Kiprijanovič, A. Matulionis, J. Xie, M. Wu, J. H. Leach, and H. Morkoç
Energy relaxation probed by weak antilocalization measurements in GaN heterostructures, H. Cheng, N. Biyikli, J. Xie, Ç. Kurdak, and H. Morkoç
Correlated growth of organic material tris (8-hydroxyquinoline) aluminum (Alq3) and its relation to optical properties, Bhargava R. Kanchibotla, K. Garre, and Deeder Aurongzeb
Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons, J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, Hadis Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, and Ç. Kurdak
On carrier spillover in c- and m-plane InGaN light emitting diodes, J. Lee, X. Li, X. Ni, Ü. Özgür, Hadis Morkoç, T. Paskova, G. Mulholland, and K. R. Evans
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes, X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, Hadis Morkoç, T. Paskova, G. Mulholland, and K. R. Evans
Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels, A. Matulionis, J. Liberis, I. Matulioniene, M. Ramonas, E. Šermukšnis, J. H. Leach, M. Wu, X. Ni, X. Li, and Hadis Morkoç
Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN, X. Ni, J. Lee, M. Wu, X. Li, Ryoko Shimada, Ü. Özgür, A. A. Baski, Hadis Morkoç, T. Paskova, G. Mulholland, and K. R. Evans
Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition, X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, and Hadis Morkoç
Retraction: “Observation of numerous E2 mode phonon replicas in the room temperature photoluminescence spectra of ZnO nanowires: Evidence of strong deformation potential electron-phonon coupling” [Appl. Phys. Lett.89, 143121 (2006)], S. Ramanathan, Supriyo Bandyopadhyay, L. K. Hussey, and M. Muñoz
Nanoelectrospray aerosols from microporous polymer wick sources, Gary C. Tepper and Royal Kessick
Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films, Bo Xiao, Vitaliy Avrutin, Hongrui Liu, Emmanuel Rowe, Jacob H. Leach, Xing Gu, Ü. Özgür, Hadis Morkoç, W. Chang, L. M.B. Alldredge, S. W. Kirchoefer, and J. M. Pond
Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer, Bo Xiao, Hongrui Liu, Vitaliy Avrutin, Jacob H. Leach, Emmanuel Rowe, Huiyong Liu, Ü. Özgür, Hadis Morkoç, W. Chang, L.M. B. Allredge, S. W. Kirchoefer, and J. M. Pond
Submissions from 2008
Transverse spin relaxation time in organic molecules, B. Kanchibotla, S. Pramanik, S. Bandyopadhyay, and M. Cahay