Submissions from 2008
Self-assembled deoxyguanosine based molecular electronic device on GaN substrates, H. Liddar, J. Li, A. Neogi, P. B. Neogi, A. Sarkar, S. Cho, and Hadis Morkoç
Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells, Xianfeng Ni, Qian Fan, Ryoko Shimada, Ü. Özgür, and Hadis Morkoç
The inequality of charge and spin diffusion coefficients, Sandipan Pramanik, Supriyo Bandyopadhyay, and Marc Cahay
Field Emission from Self-Assembled Arrays of Lanthanum Monosulfide Nanoprotrusions, V. Semet, Vu Thien Binh, M. Cahay, K. Garre, S. Fairchild, L. Grazulis, J. W. Fraser, D. J. Lockwood, S. Pramanik, B. Kanchibotla, and Supriyo Bandyopadhyay
Cavity polaritons in ZnO-based hybrid microcavities, R. Shimada, J. Xie, Vitaliy Avrutin, Ü. Özgür, and Hadis Morkoç
Current versus voltage characteristics of GaN/AlGaN/GaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure, I. P. Steinke, P. P. Ruden, X. Ni, H. Morkoç, and K.-A. Son
Single spin Toffoli-Fredkin logic gate, Amit Ranjan Trivedi and S. Bandyopadhyay
Optical transitions in a quantum wire with spin-orbit interaction and its applications in terahertz electronics: Beyond zeroth-order theory, P. Upadhyaya, S. Pramanik, and S. Bandyopadhyay
Magnetic field effects on spin texturing in a quantum wire with Rashba spin-orbit interaction, P. Upadhyaya, S. Pramanik, S. Bandyopadhyay, and M. Cahay
Large pyroelectric effect in undoped epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3 substrates, Bo Xiao, Vitaliy Avrutin, Huiyong Liu, Ü. Özgür, Hadis Morkoç, and Changzhi Lu
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers, Jinqiao Xie, Xianfeng Ni, Qian Fan, Ryoko Shimada, Ü. Özgür, and Hadis Morkoç
Submissions from 2007
Magnetotransport properties of AlxGa1-xN/AlN/GaN heterostructures grown on epitaxial lateral overgrown GaN templates, N. Biyikli, X. Ni, Y. Fu, J. Xie, H. Morkoç, H. Cheng, Ç. Kurdak, I. Vurgaftman, and J. R. Meyer
Study of SiNx and SiO2 passivation of GaN surfaces, S. A. Chevtchenko, M. A. Reshchikov, Q. Fan, X. Ni, Y. T. Moon, A. A. Baski, and H. Morkoç
Epitaxial growth of ZrO2 on GaN templates by oxide molecular beam epitaxy, Xing Gu, Natalia Izyumskaya, Vitaliy Avrutin, Bo Xiao, and Hadis Morkoç
Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy, N. Izyumskaya, Vitaliy Avrutin, X. Gu, B. Xiao, Serguei A. Chevtchenko, J-G Yoon, Hadis Morkoç, Lin Zhou, and David J. Smith
Dielectric functions and critical points of PbTiO3, PbZrO3, and PbZr0.57Ti0.43O3 grown on SrTiO3 substrate, T. D. Kang, Hosun Lee, G. Xing, N. Izyumskaya, Vitaliy Avrutin, Bo Xiao, and Hadis Morkoç
Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition, X. Ni, Ü. Özgür, A. A. Baski, Hadis Morkoç, Lin Zhou, David J. Smith, and C. A. Tran
Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition, X. Ni, U. Ozgur, H. Morkoç, Z. Liliental-Weber, and H. O. Everitt
Magnetic anisotropy and crystalline texture in BaO(Fe2O3)(6) thin films deposited on GaN/Al2O3, P. R. Ohodnicki, K. Y. Goh, Y. Hanlumyuang, K. Ramos, M. E. McHenry, Z. Cai, K. Ziemer, H. Morkoc, N. Biyikli, Z. Chen, C. Vittoria, and V. G. Harris
Energy dispersion relations of spin-split subbands in a quantum wire and electrostatic modulation of carrier spin polarization, Sandipan Pramanik, Supriyo Bandyopadhyay, and M. Cahay
Nanostructuring induced enhancement of radiation hardness in GaN epilayers, V. V. Ursaki, I. M. Tiginyanu, O. Volcuic, V. Popa, V. A. Skuratov, and Hadis Morkoç
Digital switch and femtotesla magnetic field sensor based on Fano resonance in a spin field effect transistor, J. Wan, M. Cahay, and S. Bandyopadhyay
Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer, Bo Xiao, Xing Gu, Natalia Izyumskaya, Vitaliy Avrutin, Jinqiao Xie, Huiyong Liu, and Hadis Morkoç
Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiNx nanonetwork, Jinqiao Xie, Serguei A. Chevtchenko, Ü. Özgür, and Hadis Morkoç
High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors, Jinqiao Xie, Xianfeng Ni, Mo Wu, Jacob H. Leach, Ü. Özgür, and Hadis Morkoç