Submissions from 2004
Phase-coherent quantum mechanical spin transport in a weakly disordered quasi-one-dimensional channel, M. Cahay and S. Bandyopadhyay
Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy, Sang-Jun Cho, Seydi Doğan, Shahriar Sabuktagin, Michael A. Reshchikov, D. Johnstone, and Hadis Morkoç
The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy, S. Doğan, D. Johnstone, F. Yun, S. Sabuktagin, J. Leach, A. A. Baski, Hadis Morkoç, G. Li, and B. Ganguly
Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering, Patrick A. Grandt, Aureus E. Griffith, M. O. Manasreh, D. J. Friedman, S. Doğan, and D. Johnstone
GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces, Xing Gu, Michael A. Reshchikov, Ali Teke, D. Johnstone, Hadis Morkoç, Bill Nemeth, and Jeff Nause
Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition, D. Johnstone, S. Doğan, J. Leach, Y.-T. Moon, Y. Fu, Y. Hu, and Hadis Morkoç
Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN, Y. Liu, M. Z. Kauser, M. I. Nathan, P. P. Ruden, S. Dogan, Hadis Morkoç, S. S. Park, and K. Y. Lee
Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films, Ü. Özgür, A. Teke, C. Liu, S.-J. Cho, Hadis Morkoç, and H. O. Everitt
Decay of spin-polarized hot carrier current in a quasi-one-dimensional spin-valve structure, S. Pramanik, Supriyo Bandyopadhyay, and M. Cahay
Studies of InGaN∕GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition, K. S. Ramaiah, Y. K. Su, S. J. Chang, C. H. Chen, F. S. Juang, H. P. Liu, and I. G. Chen
Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition, K. S. Ramaiah, Y. K. Su, S. J. Cheng, B. Kerr, H. P. Liu, and I. G. Chen
Transient photovoltage in GaN as measured by atomic force microscope tip, M. A. Reshchikov, S. Sabuktagin, D. K. Johnstone, and H. Morkoç
Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy, J. Spradlin, S. Doǧan, J. Xie, R. Molnar, A. A. Baski, and Hadis Morkoç
Excitonic fine structure and recombination dynamics in single-crystalline ZnO, A. Teke, Ü. Özgür, S. Doğan, X. Gu, Hadis Morkoç, B. Nemeth, J. Nause, and H. O. Everitt
Submissions from 2003
Conductance modulation of spin interferometers, Marc Cahay and Supriyo Bandyopadhyay
4H–SiC photoconductive switching devices for use in high-power applications, S. Doǧan, A. Teke, D. Huang, Hadis Morkoç, C. B. Roberts, J. Parish, B. Ganguly, M. Smith, R. E. Meyers, and S. E. Saddow
Generation–recombination noise in gallium nitride-based quantum well structures, Rolando S. Duran, Grover L. Larkins Jr., Carolyn M. Van Vliet, and Hadis Morkoç
Electric-field-induced heating and energy relaxation in GaN, T. A. Eckhause, Ö. Süzer, Ç. Kurdak, F. Yun, and Hadis Morkoç
Contactless electroreflectance, in the range of 20 K < T < 300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy, Y. S. Huang, Fred H. Pollak, S. S. Park, K. Y. Lee, and H. Morkoç
Observation of optical phonon instability induced by drifting electrons in semiconductor nanostructures, W. Liang, K. T. Tsen, Otto F. Sankey, S. M. Komirenko, K. W. Kim, V. A. Kochelap, Meng-Chyi Wu, Chong-Long Ho, Wen-Jeng Ho, and Hadis Morkoç
Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells, Ü. Özgür, Henry O. Everitt, Lei He, and Hadis Morkoç
Current mapping of GaN films by conductive atomic force microscopy, A. A. Pomarico, D. Huang, J. Dickinson, A. A. Baski, R. Cingolani, Hadis Morkoç, and R. Molnar
Unusual luminescence lines in GaN, M. A. Reshchikov, D. Huang, F. Yun, P. Visconti, L. He, H. Morkoç, J. Jasinski, Z. Liliental-Weber, R. J. Molnar, S. S. Park, and K. Y. Lee
Long-lasting photoluminescence in freestanding GaN templates, Michael A. Reshchikov, M. Zafar Iqbal, Hadis Morkoç, S. S. Park, and K. Y. Lee
Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching, J. Spradlin, S. Doğan, M. Mikkelson, D. Huang, L. He, D. Johnstone, Hadis Morkoç, and R. J. Molnar