Submissions from 2003
Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures, Qiaoying Zhou, Jiayu Chen, B. Pattada, M. O. Manasreh, Faxian Xiu, Steve Putigan, K. S. Ramaiah, and Hadis Morkoç
Submissions from 2002
Properties of AlxGa1−xN layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions, L. He, Michael A. Reshchikov, F. Yun, D. Huang, T. King, and Hadis Morkoç
Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy, D. Huang, Michael A. Reshchikov, F. Yun, T. King, A. A. Baski, and Hadis Morkoç
Room-temperature single-electron charging in electrochemically synthesized semiconductor quantum dot and wire array, N. Kouklin, L. Menon, and Supriyo Bandyopadhyay
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study, Michael A. Reshchikov, Hadis Morkoç, S. S. Park, and K. Y. Lee
Energy band bowing parameter in AlxGa1-xN alloys, Feng Yun, Michael A. Reshchikov, Lei He, Thomas King, Hadis Morkoç, Steve W. Novak, and Luncun Wei
Growth of GaN films on porous SiC substrate by molecular-beam epitaxy, F. Yun, Michael A. Reshchikov, L. He, Hadis Morkoç, C. K. Inoki, and T. S. Kuan
Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain, S. K. Zhang, W. B. Wang, I. Shtau, F. Yun, L. He, Hadis Morkoç, X. Zhou, M. Tamargo, and R. R. Alfano
Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells, S. K. Zhang, W. B. Wang, F. Yun, L. He, Hadis Morkoç, X. Zhou, M. Tamargo, and R. R. Alfano
Submissions from 2001
Deep centers in a free-standing GaN layer, Z.-Q. Fang, D. C. Look, P. Visconti, D.-F. Wang, C.-Z. Lu, F. Yun, Hadis Morkoç, S. S. Park, and K. Y. Lee
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy, D. Huang, P. Visconti, K. M. Jones, Michael A. Reshchikov, F. Yun, A. A. Baski, T. King, and Hadis Morkoç
Characterization of free-standing hydride vapor phase epitaxy GaN, J. Jasinski, W. Sider, Z. Lilental-Weber, P. Visconti, K. M. Jones, Michael A. Reshchikov, F. Yun, Hadis Morkoç, S. S. Park, and K. Y. Lee
Giant photoresistivity and optically controlled switching in self-assembled nanowires, N. Kouklin, L. Menon, A. Z. Wong, D. W. Thompson, J. A. Woollam, P. F. Williams, and Supriyo Bandyopadhyay
Systematic measurement of AlxGa1−xN refractive indices, Ü. Özgür, Grady Webb-Wood, Henry O. Everitt, Feng Yun, and Hadis Morkoç
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template, Michael A. Reshchikov, D. Huang, F. Yun, L. He, Hadis Morkoç, D. C. Reynolds, S. S. Park, and K. Y. Lee
Transient photoluminescence of defect transitions in freestanding GaN, Michael A. Reshchikov, Hadis Morkoç, S. S. Park, and K. Y. Lee
Yellow and green luminescence in a freestanding GaN template, Michael A. Reshchikov, Hadis Morkoç, S. S. Park, and K. Y. Lee
Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy, Michael A. Reshchikov, P. Visconti, and Hadis Morkoç
Submissions from 2000
Well-width dependence of the ground level emission of GaN/AlGaN quantum wells, A. Bonfiglio, M. Lomascolo, G. Traetta, R. Cingolani, A. Di Carlo, F. Della Sala, P. Lugli, A. Botchkarev, and H. Morkoç
Bias-assisted photoelectrochemical etching of p-GaN at 300 K, J. E. Borton, C. Cai, M. I. Nathan, P. Chow, J. M. Van Hove, A. Wowchak, and Hadis Morkoç
Observation of electronic Raman scattering from Mg-doped wurtzite GaN, K. T. Tsen, C. Koch, Y. Chen, Hadis Morkoç, J. Li, J. Y. Lin, and H. X. Jiang
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching, P. Visconti, K. M. Jones, Michael A. Reshchikov, R. Cingolani, Hadis Morkoç, and R. J. Molnar
Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration, P. Visconti, K. M. Jones, Michael A. Reshchikov, F. Yun, R. Cingolani, Hadis Morkoç, S. S. Park, and K. Y. Lee
Submissions from 1999
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN, Tomasz J. Ochalski, Bernard Gil, Pierre Lefebvre, Nicolas Grandjean, Mathieu Leroux, Jean Massies, Shuji Nakamura, and Hadis Morkoç
Submissions from 1998
Deep centers in n-GaN grown by reactive molecular beam epitaxy, Z.-Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev, and Hadis Morkoç