Publications from the Department of Electrical and Computer Engineering, Virginia Commonwealth University.

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Submissions from 2007

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Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers, J. Xie, J. H. Leach, X. Ni, M. Wu, R. Shimada, Ü. Özgür, and Hadis Morkoç

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Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork, J. Xie, Ü. Özgür, Y. Fu, X. Ni, Hadis Morkoç, C. K. Inoki, T. S. Kuan, J. V. Foreman, and H. O. Everitt

Submissions from 2006

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Growth optimization and structural analysis for ferromagnetic Mn-doped ZnO layers deposited by radio frequency magnetron sputtering, M. Abouzaid, P. Ruterana, C. Liu, and H. Morkoç

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Band offset measurements of ZnO∕6H-SiC heterostructure system, Ya. I. Alivov, Bo Xiao, Q. Fan, Hadis Morkoç, and D. Johnstone

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Infrared absorption in a quantum wire: A technique to measure different types of spin-orbit interaction strengths, S. Bandyopadhyay and S. Sarkar

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Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1-xN/AlN/GaN heterostructures, N. Biyikli, Ü. Özgür, X. Ni, Y. Fu, H. Morkoç, and Ç. Kurdak

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Quantitative mobility spectrum analysis of AlGaN∕GaN heterostructures using variable-field hall measurements, N. Biyikli, J. Xie, Y.-T. Moon, F. Yun, C.-G. Stefanita, S. Bandyopadhyay, Hadis Morkoç, and I. Vurgaftman

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Comparative study of the (0001) and (0001) surfaces of ZnO, S. A. Chevtchenko, J. C. Moore, Ü. Özgür, Xing Gu, A. A. Baski, Hadis Morkoç, B. Nemeth, and J. E. Nause

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Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy, S. A. Chevtchenko, X. Ni, Q. Fan, A. A. Baski, and Hadis Morkoç

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Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices, E. D. DeCuir Jr., Emil Fred, B. S. Passmore, A. Muddasani, M. O. Manasreh, Jinqiao Xie, Hadis Morkoç, M. E. Ware, and G. J. Salamo

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Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy, Y. Fu, F. Yun, Y. T. Moon, Ü. Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, Lin Zhou, David J. Smith, C. K. Inoki, and T. S. Kuan

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High quality epitaxial growth of PbTiO3 by molecular beam epitaxy using H2O2 as the oxygen source, Xing Gu, Natalia Izyumskaya, Vitaliy Avrutin, Hadis Morkoç, Tae Dong Kang, and Hosun Lee

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Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy, L. He, Y.-T. Moon, J. Xie, M. Muñoz, D. Johnstone, and Hadis Morkoç

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Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor, Youn-Seon Kang, Qian Fan, Bo Xiao, Ya. I. Alivov, Jinqiao Xie, Norio Onojima, Sang-Jun Cho, Yong-Tae Moon, Hosun Lee, D. Johnstone, Hadis Morkoç, and Young-Soo Park

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Weak antilocalization and zero-field electron spin splitting in AlxGa1−xN∕AlN∕GaN heterostructures with a polarization-induced two-dimensional electron gas, Ç Kurdak, N. Biyikli, Ü. Özgür, Hadis Morkoç, and V. I. Litvinov

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Spectroscopic ellipsometry and absorption study of Zn1-xMnxO/Al2O3 (0 <= x <= 0.08) thin films, Ghil Soo Lee, Ho Suk Lee, Tae Dong Kang, Hosun Lee, C. Liu, B. Xiao, Ü. Özgür, and H. Morkoç

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Effect of C∕Si ratio on deep levels in epitaxial 4H–SiC, C. W. Litton, D. Johnstone, S. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, and E. F. Schubert

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Effect of hydrostatic pressure on the current-voltage characteristics of GaN∕AlGaN∕GaN heterostructure devices, Y. Liu, M. Z. Kauser, D. D. Schroepfer, P. P. Ruden, J. Xie, Y. T. Moon, N. Onojima, H. Morkoç, K.-A. Son, and M. I. Nathan

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Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors, Y. Liu, P. P. Ruden, J. Xie, Hadis Morkoç, and K.-A. Son

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In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN∕GaN cracks, Y. T. Moon, C. Liu, J. Xie, X. Ni, Y. Fu, Hadis Morkoç, Lin Zhou, and David J. Smith

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Defect reduction in (112¯0) a-plane GaN by two-stage epitaxial lateral overgrowth, X. Ni, Ü. Özgür, Y. Fu, N. Biyikli, J. Xie, A. A. Baski, Hadis Morkoç, and Z. Liliental-Weber

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Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN, Ü. Özgür, X. Ni, Y. Fu, Hadis Morkoç, and H. O. Everitt

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Spin relaxation in a germanium nanowire, S. Patibandla, S. Pramanik, S. Bandyopadhyay, and G. C. Tepper

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Spin relaxation in a germanium nanowire, S. Patibandla, S. Pramanik, S. Bandyopadhyay, and G. C. Tepper

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Spin relaxation of “upstream” electrons in quantum wires: Failure of the drift diffusion model, Sandipan Pramanik, Supriyo Bandyopadhyay, and Marc Cahay